PART |
Description |
Maker |
BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
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Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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EM640FU8E |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Emerging Memory & Logic Solutions
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DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Samsung Electronic Samsung semiconductor
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BS616UV8010BI BS616UV8010 BS616UV8010BC |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
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BSI[Brilliance Semiconductor]
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89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位)低压亿立方米的SRAM
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Maxwell Technologies, Inc
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BS616LV8012 BS616LV8012BI BS616LV8012BC |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
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BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
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BSI[Brilliance Semiconductor]
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BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
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BSI[Brilliance Semiconductor]
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A81L801UG-70IF A81L801 A81L801TG-70 A81L801TG-70F |
Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
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AMICC[AMIC Technology]
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